RANDOM ACCESS MEMORY BASED IN FERROMAGNETIC INSULATOR AND SUPERCONDUCTOR HETEROJUNCTIONS (PROXIMITY RAM)
The present invention consists of a device consisting of a matrix of random access memory cells (RAM) to be used for quantum and classical computers. Each cell consists of a FI-S-I-S-FI stack, where FI is a ferromagnetic insulator, S is a superconductor and I is a tunnel barrier. These devices exploit two combined physical effects: the magnetic proximity effect and the absolute spin valve effect.
Application number: IT 102017000107007
PCT extension n. PCT/EP2018/072826
- The identification of reliable memory devices for superconducting computers. These emerging technologies require a drastic reduction in energy consumption and dissipated heat, which is one of the main limiting factors in current computing technologies.
- Identification of simple structures compatible with production technologies. The structural complexity makes some of the currently available options invalid.
- Improve the density of integration. Higher densities allow more memory to be available in the same space, increasing the overall computing performance.
- Francesco GIAZOTTO
- Elia STRAMBINI
- Giorgio DE SIMONI
- Sebastian BERGERET
- Babaro BERGERET
- National Research Council (Italy) (48%)
- Spanish National Research Council (Spain) (42%)
- University of the Basque Country (Spain) (10%)